Comparative Analysis of Low Noise Amplifiers (LNA) Fabricated from GaAs,GaN, InP, SiGe , BiCMOS ,CNFET, Silicon for High-Frequency Applications

Abstract

An analysis of Low Noise Amplifiers (LNAs) fabricated from Gallium Arsenide (GaAs), Gallium Nitride (GaN), BiCMOS, Silicon Germanium (SiGe), Silicon and Indium Phosphide (InP) is presented.  Performance parameters, including S21(gain), noise figure (NF), 1dB compression power (P1dB), and stability are studied over various frequency bands. With the help of a comparative graph, the advantages and disadvantages of the various materials are compared, showing the advantages in different communication systems in different frequencies.