Nanoelectronics: Fabrication and Characterization of Graphene-Based Transistors for Next-Generation Computing

Abstract

The rapid advancements in nanoelectronics have led to significant breakthroughs in the design and development of high-performance transistors. Graphene, with its exceptional electrical, mechanical, and thermal properties, has emerged as a promising candidate for next-generation computing devices. This research paper explores the fabrication and characterization of graphene-based transistors, emphasizing their potential to revolutionize computing technologies by overcoming the limitations of conventional silicon-based devices. Graphene’s high electron mobility, intrinsic strength, and atomic thickness make it an ideal material for the fabrication of nanoscale transistors. Unlike traditional semiconductors, graphene lacks an inherent bandgap, posing a challenge for its direct application in digital electronics. However, various engineering approaches, including chemical doping, strain engineering, and hybrid material integration, have been developed to induce a tunable bandgap, making graphene suitable for transistor applications. The research focuses on the synthesis of high-quality graphene through methods such as chemical vapor deposition (CVD) and mechanical exfoliation, followed by precise patterning and device fabrication techniques. The characterization of graphene-based transistors involves analyzing key performance metrics such as carrier mobility, on/off current ratio, threshold voltage, and power dissipation. Advanced techniques, including Raman spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM), are employed to assess the structural and electrical properties of the fabricated devices. Furthermore, the impact of environmental factors, substrate interactions, and contact resistance on device performance is examined to optimize the reliability and scalability of graphene transistors. This study also highlights the integration of graphene-based transistors with emerging computing architectures, such as neuromorphic and quantum computing, to enhance computational speed and energy efficiency. The potential of graphene transistors in flexible and transparent electronics is explored, paving the way for applications in wearable technology and next-generation communication systems. Despite the promising attributes of graphene, challenges such as large-scale production, material uniformity, and process compatibility with existing semiconductor fabrication remain critical hurdles. The paper discusses recent advancements in overcoming these obstacles, including novel fabrication techniques and hybrid material approaches. Finally, the fabrication and characterization of graphene-based transistors represent a transformative step toward high-speed, energy-efficient nanoelectronics. With continuous advancements in material engineering and device integration, graphene holds the potential to redefine the future of computing beyond the limitations of traditional semiconductor technologies. Further research and industry collaboration are essential to realize the full potential of graphene transistors in commercial applications, enabling the next generation of ultra-fast and low-power computing devices.